AdvaPIX TPX3

Advapix

Advacam’s AdvaPIX TPX3 camera is designed with special emphasis on performance and versatility, which is often required in scientific research world. The camera module contains CERN’s latest Timepix3 device with ultra-fast sparse data readout to acquire up to 40 million hits/ second. The module uses USB 3.0 communication channel assuring quick read-out of the system.

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Description

The Advacam’s AdvaPIX TPX3 can be used in a variety of applications, such as energy resolved radiography (X-rays, neutrons, ions), time-of-flight imaging, multilayer Compton camera, particle tracking, and many others. The sensors can be modified for neutron imaging by depositing converter layer (⁶LiF). Recording individual hits together along with advanced data processing allows increased spatial resolution to units on a micron or even sub-micrometric level (for ions). The camera’s modules can be used in different configurations: telescope of several layers for better particle tracking and/or side-by-side for larger area coverage.

Compared to the older Timepix chip, the Timepix3 detector offers 6x better time resolution, 2x better energy resolution, 2x lower minimum energy threshold, 10x faster data transfer and zero dead time. A separate USB 3.0 channel for each module assures fast read-out of the whole modular system. The sensor type and thickness is of customer’s choice.

Sensor Material: Si or CdTe
Sensor Thickness: 100 μm, 300 μm and 500 μm for Si; 1 mm for CdTe
Sensitive Area: 14 mm x 14 mm
Time Resolution: 1.6 ns
Readout Speed: 40 Million hits/s
Number of Pixels: 256 x 256
Pixel Pitch: 55 μm
Energy Resolution: 1 keV
Min Detectable Energy: 3 keV for X-rays
Readout Chip: Timepix3
Pixel Mode of Operation: Time-over-Threshold, Time-of -Arrival
Connectivity: USB 3.0 (Super-Speed)
Weight: 503 g
Dimensions: 125 mm x 79 mm x 25.5 mm
Software: Pixet Pro

Typical Applications:

Spectral X-ray imaging: X-ray fluorescence imaging, X-ray radiography (low flux)
Energy dispersive XRD, SAXS or WAXS: The monochromatic X-ray source is NOT needed! Even high energy for thick samples is possible (e.g. 100 keV)
Spectral gamma ray imaging: Scintigraphy or SPECT, radiography with isotopes
Radiation monitor: Particle type sorting, spectroscopy, directional sensitivity
Gamma camera: Special shielded box and collimators
Compton camera: Special software module available for image reconstruction

Documents

Device parameters

Operating conditions

Symbol	Parameter	Value	Units	Comment
T_A	Ambient Temperature Range	0-50	°C
Φ	Humidity	<80	%	Not condensing
	Altitude*	<2000	m	Above sea level
IP	IP rating	IP40		With cover

*for use in vacuum chamber, operate only with air pressure lower than 10^-3Pa Location: Intended for indoor use, dust free.

Electrical Specification

T_A = 25°C, USB voltage V_CC = 4.8V

Symbol	Parameter	Min	Typ	Max	Units	Comment
V_CC	Supply Voltage	4.0	5.0	5.5	V
I_CC	Supply Current
I_CC1	Chip active		800	1500	mA
P1	Power Dissipation			7.5	W
I/O Conn. Input CMOS (pin 5,6,7,8,9)
V_INL	Voltage Low	-0.3		0.7	V
V_INH	Voltage High	1.7		2.8	V
I/O Conn. Input LVDS (pin 3,4)
V_IN	Voltage Range	0		2.5	V
V_INDIFF	Differential Voltage	250		600	mV
I/O Conn. +5V (pin 2)
I_MAX	Maximum current	0		1.15	V
V_+5V	Pin Voltage		4.5		V	VCC – 0.5V
Bias Voltage Source for Sensor Diode
V_BIAS	Bias Voltage	0		±450	V	Polarity is sensor dependent

Performance characteristics of Timepix3

Symbol	Parameter	Min	Typ	Max	Units	Comment
f	Hit-rate			40	MPixels/s	with USB 3.0 cable
	Data rate			2.4	Gbit/s	with USB 3.0 cable
T_READ	Frame Readout Time³		33		ms	with USB 3.0 cable
dT	Time resolution	1.56			ns
F_READ	Read-out frequency		320		MHz	½ of maximum ROC freq

Pixel mode hit-rate measurement

The whole detector is exposed to homogenous perpendicular irradiation from X-ray tube operated at 18 kVp with 2 mm Aluminum filter. The measurement type is set to “Pixels” and mode to “ToT+ToA” all other parameters are set to factory defaults (as stored in configuration file delivered with device). The exposure time is set to 0.1 s. The “Clustering” tool of PiXet-Pro is used to analyze measured data. The number of hit pixels per second is drawn as function of X-ray tube current searching for saturation. The real number of events is verified for each step using frame type measurement when all hits are accumulated in single frame.

Sensor parameters

T_A = 25°C

Symbol	Parameter	Si				CdTe	Units	Comment
	Thickness	100	300	500	675	1000	µm
σ	Energy resolution of energy discrimination threshold (σ @ 23 keV)	0.5				1.1	keV
σ	Energy resolution of energy discrimination threshold (σ @ 60 keV)	0.6				1.5	keV
σ	Energy resolution in full spectral mode (σ @ 23 keV)	0.7				3.0	keV
σ	Energy resolution in full spectral mode (σ @ 60 keV)	1.0				3.6	keV
	Typical detectable energy range for X-rays	5 to 60				5 to 500	keV	See chart below
	Pixel size	55				55	µm

Basic principles, measurement types and modes

The ionizing radiation particle interacts with the sensor material creating an electric charge. This charge is collected by electric field and brought to pixel preamplifier where it is amplified and shaped forming triangular voltage pulse. The amplitude and duration of this pulse is proportional to energy deposited by particle within the pixel. The situation when the voltage pulse amplitude in particular pixel exceeds preselected threshold value is called “event” or “hit”. Each pixel contains three digital counters (10, 14 and 4 bits). These counters are used differently according to measurement type and mode. There are four basic values which can be measured and stored in counters of each pixel:

Measurement modes:

Number of Events	number of events (hits) in the pixel during exposure time (this mode is suitable mainly for frame type readout)
Time-over-Threshold (ToT)	measured as number of periods of 40 MHz clock signal (25 ns step) when amplifier output signal stays over the energy threshold. The ToT can be transformed to energy in keV using per-pixel-calibration function. The coefficients for per-pixel-calibration are unique for each detector pixel and they are stored in configuration file delivered with device. The energy calibration is valid only for given values of other detector parameters as delivered in configuration file (especially threshold)
Time-of-Arrival (ToA)	number of periods of 40 MHz clock signal (25 ns step) from start of exposure till the event is registered by pixel (i.e. pulse in pixel crosses the threshold). The range is 409.6 µs. Additional 16 bits are added in FPGA in readout electronics so that the total range is 26.8 seconds. The additional bits are usable only if the pixel hit rate is below maximal value (see fp in table of Performance characteristics)
Fast-Time-of-Arrival (FToA)	time difference between event detection and next clock signal measured with step of 1.5625 ns. Range is 4 bits. The combination of ToA and FToA gives precise time of event detection in nanoseconds using following formula: Time [ns] = ToA25 – FToA1.5625 ToA and FTOA are combined together by software. If saved then ToA and FToA are stored as separate items

Measurement types:

Frame type measurement No data is sent out of device during the exposure time. All measured events are accumulated in counters of pixels. Event counter is incremented and ToT is integrated for all events. The measured data is read-out after end of exposure time for all pixels with nonzero content. No measurement can be performed during readout process. Pixel type measurement Information about all hit pixels is read-out immediately and continuously during exposure time. If hit rate is below maximal value (see fp in table of Performance characteristics) then there is virtually no deadtime. Major modes and types of operation (rarely used combinations are shown with gray background):

Type	Mode	Range	Description
Frame (reading all pixels after end of exposure)	Event+iToT	10 bit + 14 bit	2 output frames per exposure: 1^st Events = Number of events in pixel, 2^nd iToT = total time over threshold for all events in pixel.
	iToT	14 bit	1 output frame: iToT = total time over threshold for all events in pixel.
	ToA	18 bit	1 output frame: ToA+FToA³= Time of Arrival of first event in pixel.
Pixel (reading only hit pixels continuously during exposure)	ToT+ToA	10 bit + 18 bit	4 numbers per pixel per event: Position, ToT, ToA and FToA.
	ToA	18 bit	3 numbers per pixel per event: Position, ToA and FToA.
	Only ToT	10 bit	2 number per pixel per event: Position and ToT.

Device description

+5VDC connector

Main power supply (via standard 5.5/2.1mm barrel connector). Connect after plugging USB connector.

USB 3.0 connector

USB type micro B, Standard USB 3.0 Super-Speed.

I/O Digital connector

Signals on I/O Digital connector are used for synchronization purposes. For details see Synchronization guide for TPX3. Input pins are NOT +5V compatible. Pin 2 (+5V) may be used for power of external circuitry. It is taken directly from +5VDC connector, protected by schottky diode (0.5A max) Pin directions (Input/output) are dependent on polarity of pin 9 (Dir Select).

Table for version APXMD3-Xxx170704

Pin	Name	Signal type	Pin	Name	Signal type
1	GND		2	+5V
3	Resersved	CMOS 0-2.5V	4	Resersved	CMOS 0-2.5V
5	Resersved	CMOS 0-2.5V	6	Resersved	CMOS 0-2.5V
7	NC	–	8	Resersved	CMOS 0-3.3V
9	NC	–	10	Resersved	CMOS 0-3.3V

Table for version APXMD3-Xxx180119

Pin	Name	Signal type	Pin	Name	Signal type
1	GND		2	+5V
3	CLK p	LVDS (2.5V)	4	CLK n	LVDS (2.5V)
5	E2	CMOS 0-2.5V	6	E1	CMOS 0-2.5V
7	Trigger Out	CMOS 0-2.5V	8	Trigger In	CMOS 0-2.5V
9	Dir select	CMOS 0-2.5V	10	GND

Mechanical dimensions

Without protection cover

All dimensions are in mm.

With protection cover